PMCXB900UE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMCXB900UE
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.265 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.2 nS
Cossⓘ - Capacitancia de salida: 5.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm
Paquete / Cubierta: DFN1010B-6
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PMCXB900UE Datasheet (PDF)
pmcxb900ue.pdf

PMCXB900UE20 V, complementary N/P-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in aleadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plasticpackage using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Very low threshold vo
pmcxb900uel.pdf

PMCXB900UEL20 V, complementary N/P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in aleadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plasticpackage using Trench MOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology
pmcxb1000ue.pdf

PMCXB1000UE30 V, complementary N/P-channel Trench MOSFET27 June 2016 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultrasmall DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Very low threshold v
Otros transistores... WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 , PMCPB5530X , EMB04N03H , PMDPB28UN , PMDPB30XN , PMDPB38UNE , PMDPB42UN , PMDPB55XP , PMDPB56XN , PMDPB58UPE , PMDPB70EN .
History: RYM002N05 | AP3A010AMT | IXFH50N85X | SVF840F | JCS2N65F | IRF7480M | SVF7N80F
History: RYM002N05 | AP3A010AMT | IXFH50N85X | SVF840F | JCS2N65F | IRF7480M | SVF7N80F



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