PMCXB900UE Todos los transistores

 

PMCXB900UE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMCXB900UE
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.265 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 5.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm
   Paquete / Cubierta: DFN1010B-6
 

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PMCXB900UE Datasheet (PDF)

 ..1. Size:312K  nxp
 pmcxb900ue.pdf pdf_icon

PMCXB900UE

PMCXB900UE20 V, complementary N/P-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in aleadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plasticpackage using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Very low threshold vo

 0.1. Size:795K  nxp
 pmcxb900uel.pdf pdf_icon

PMCXB900UE

PMCXB900UEL20 V, complementary N/P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in aleadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plasticpackage using Trench MOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology

 9.1. Size:775K  nxp
 pmcxb1000ue.pdf pdf_icon

PMCXB900UE

PMCXB1000UE30 V, complementary N/P-channel Trench MOSFET27 June 2016 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultrasmall DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Very low threshold v

Otros transistores... WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 , PMCPB5530X , HY1906P , PMDPB28UN , PMDPB30XN , PMDPB38UNE , PMDPB42UN , PMDPB55XP , PMDPB56XN , PMDPB58UPE , PMDPB70EN .

History: AP9971AGP | UF640L-TN3-R | NP34N055HHE | CS75N75B8H

 

 
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