PMDPB28UN Todos los transistores

 

PMDPB28UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMDPB28UN
   Código: 1P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.51 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 8 V
   Corriente continua de drenaje |Id|: 4.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 3.1 nC
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 76 pF
   Resistencia entre drenaje y fuente RDS(on): 0.037 Ohm
   Paquete / Cubierta: DFN2020-6

 Búsqueda de reemplazo de MOSFET PMDPB28UN

 

PMDPB28UN Datasheet (PDF)

 ..1. Size:829K  nxp
pmdpb28un.pdf

PMDPB28UN
PMDPB28UN

PMDPB28UN20 V, dual N-channel Trench MOSFETRev. 1 26 April 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small

 9.1. Size:879K  nxp
pmdpb55xp.pdf

PMDPB28UN
PMDPB28UN

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 9.2. Size:200K  nxp
pmdpb95xne.pdf

PMDPB28UN
PMDPB28UN

PMDPB95XNE30 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo

 9.3. Size:894K  nxp
pmdpb80xp.pdf

PMDPB28UN
PMDPB28UN

PMDPB80XP20 V, dual P-channel Trench MOSFETRev. 1 30 May 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for low voltag

 9.4. Size:930K  nxp
pmdpb42un.pdf

PMDPB28UN
PMDPB28UN

PMDPB42UN20 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 9.5. Size:873K  nxp
pmdpb85upe.pdf

PMDPB28UN
PMDPB28UN

PMDPB85UPE20 V dual P-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

 9.6. Size:222K  nxp
pmdpb30xn.pdf

PMDPB28UN
PMDPB28UN

PMDPB30XN20 V, dual N-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET techno

 9.7. Size:720K  nxp
pmdpb95xne2.pdf

PMDPB28UN
PMDPB28UN

PMDPB95XNE230 V, dual N-channel Trench MOSFET14 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology Leadless medium powe

 9.8. Size:839K  nxp
pmdpb70xp.pdf

PMDPB28UN
PMDPB28UN

PMDPB70XP30 V, dual P-channel Trench MOSFETRev. 1 9 March 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small and leadless

 9.9. Size:211K  nxp
pmdpb38une.pdf

PMDPB28UN
PMDPB28UN

PMDPB38UNE20 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo

 9.10. Size:879K  nxp
pmdpb56xn.pdf

PMDPB28UN
PMDPB28UN

PMDPB56XN30 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 9.11. Size:817K  nxp
pmdpb70xpe.pdf

PMDPB28UN
PMDPB28UN

PMDPB70XPE20 V dual P-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching 2

 9.12. Size:727K  nxp
pmdpb56xnea.pdf

PMDPB28UN
PMDPB28UN

PMDPB56XNEA30 V, dual N-channel Trench MOSFET19 April 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium

 9.13. Size:842K  nxp
pmdpb70en.pdf

PMDPB28UN
PMDPB28UN

PMDPB70EN30 V, dual N-channel Trench MOSFETRev. 1 25 April 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small

 9.14. Size:875K  nxp
pmdpb58upe.pdf

PMDPB28UN
PMDPB28UN

PMDPB58UPE20 V dual P-channel Trench MOSFETRev. 1 19 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

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