PMDPB28UN Todos los transistores

 

PMDPB28UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMDPB28UN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: DFN2020-6
 

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PMDPB28UN Datasheet (PDF)

 ..1. Size:829K  nxp
 pmdpb28un.pdf pdf_icon

PMDPB28UN

PMDPB28UN20 V, dual N-channel Trench MOSFETRev. 1 26 April 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small

 9.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB28UN

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 9.2. Size:200K  nxp
 pmdpb95xne.pdf pdf_icon

PMDPB28UN

PMDPB95XNE30 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo

 9.3. Size:894K  nxp
 pmdpb80xp.pdf pdf_icon

PMDPB28UN

PMDPB80XP20 V, dual P-channel Trench MOSFETRev. 1 30 May 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for low voltag

MOSTRAR MÁS

Otros transistores... WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 , PMCPB5530X , PMCXB900UE , IRF9640 , PMDPB30XN , PMDPB38UNE , PMDPB42UN , PMDPB55XP , PMDPB56XN , PMDPB58UPE , PMDPB70EN , PMDPB70XP .

History: 2SK2445 | GP1T080A120B

 

 
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