PMDPB28UN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMDPB28UN
Marking Code: 1P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.1 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: DFN2020-6
PMDPB28UN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMDPB28UN Datasheet (PDF)
pmdpb28un.pdf
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pmdpb42un.pdf
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pmdpb85upe.pdf
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pmdpb30xn.pdf
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pmdpb95xne2.pdf
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pmdpb38une.pdf
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pmdpb56xn.pdf
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pmdpb70xpe.pdf
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pmdpb56xnea.pdf
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pmdpb70en.pdf
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pmdpb58upe.pdf
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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AOB280L | NCE15H10A | WMQ30N03T2 | NTTFS6H850NL | KIA3308A-252 | NTTFS4939NTAG | VBMB1638
History: AOB280L | NCE15H10A | WMQ30N03T2 | NTTFS6H850NL | KIA3308A-252 | NTTFS4939NTAG | VBMB1638
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