PMDPB56XN Todos los transistores

 

PMDPB56XN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMDPB56XN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.073 Ohm
   Paquete / Cubierta: DFN2020-6
 

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PMDPB56XN Datasheet (PDF)

 ..1. Size:879K  nxp
 pmdpb56xn.pdf pdf_icon

PMDPB56XN

PMDPB56XN30 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 0.1. Size:727K  nxp
 pmdpb56xnea.pdf pdf_icon

PMDPB56XN

PMDPB56XNEA30 V, dual N-channel Trench MOSFET19 April 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium

 8.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB56XN

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.2. Size:875K  nxp
 pmdpb58upe.pdf pdf_icon

PMDPB56XN

PMDPB58UPE20 V dual P-channel Trench MOSFETRev. 1 19 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

MOSTRAR MÁS

Otros transistores... WFY6N02 , PMCPB5530X , PMCXB900UE , PMDPB28UN , PMDPB30XN , PMDPB38UNE , PMDPB42UN , PMDPB55XP , AO3407 , PMDPB58UPE , PMDPB70EN , PMDPB70XP , PMDPB70XPE , PMDPB80XP , PMDPB85UPE , PMDPB95XNE , PMDT290UCE .

 

 
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