PMDXB950UPE Todos los transistores

 

PMDXB950UPE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMDXB950UPE
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.265 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: DFN1010B-6
 

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PMDXB950UPE Datasheet (PDF)

 ..1. Size:246K  nxp
 pmdxb950upe.pdf pdf_icon

PMDXB950UPE

PMDXB950UPE20 V, dual P-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pl

 0.1. Size:732K  nxp
 pmdxb950upel.pdf pdf_icon

PMDXB950UPE

PMDXB950UPEL20 V, dual P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra s

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB950UPE

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.2. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB950UPE

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

MOSTRAR MÁS

Otros transistores... PMDPB85UPE , PMDPB95XNE , PMDT290UCE , PMDT290UNE , PMDT670UPE , PMDXB1200UPE , PMDXB550UNE , PMDXB600UNE , IRFZ44 , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP , PMFPB8040XP , PMG45UN , PMGD130UN , PMGD175XN .

History: AP9451GG-HF | GSM2604 | NVMFS3D6N10MCL | KP741A | SI2305CDS | CJU20N06 | KP511B

 

 
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