All MOSFET. PMDXB950UPE Datasheet

 

PMDXB950UPE Datasheet and Replacement


   Type Designator: PMDXB950UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.265 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.19 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DFN1010B-6
 

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PMDXB950UPE Datasheet (PDF)

 ..1. Size:246K  nxp
 pmdxb950upe.pdf pdf_icon

PMDXB950UPE

PMDXB950UPE20 V, dual P-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pl

 0.1. Size:732K  nxp
 pmdxb950upel.pdf pdf_icon

PMDXB950UPE

PMDXB950UPEL20 V, dual P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra s

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB950UPE

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.2. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB950UPE

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

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History: SSM6L14FE | SFS06R10BF | VS3640AE

Keywords - PMDXB950UPE MOSFET datasheet

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