PMDXB950UPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMDXB950UPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.265 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 0.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.19 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 14 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: DFN1010B-6
PMDXB950UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMDXB950UPE Datasheet (PDF)
pmdxb950upe.pdf
PMDXB950UPE20 V, dual P-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pl
pmdxb950upel.pdf
PMDXB950UPEL20 V, dual P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra s
pmdxb600une.pdf
PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla
pmdxb1200upe.pdf
PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla
pmdxb600unel.pdf
PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti
pmdxb550une.pdf
PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RF1S40N10SM
History: RF1S40N10SM
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