PMDXB950UPE Specs and Replacement

Type Designator: PMDXB950UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.265 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: DFN1010B-6

PMDXB950UPE substitution

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PMDXB950UPE datasheet

 ..1. Size:246K  nxp
 pmdxb950upe.pdf pdf_icon

PMDXB950UPE

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pl... See More ⇒

 0.1. Size:732K  nxp
 pmdxb950upel.pdf pdf_icon

PMDXB950UPE

PMDXB950UPEL 20 V, dual P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra s... See More ⇒

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB950UPE

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla... See More ⇒

 9.2. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB950UPE

PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla... See More ⇒

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Detailed specifications: PMDPB85UPE, PMDPB95XNE, PMDT290UCE, PMDT290UNE, PMDT670UPE, PMDXB1200UPE, PMDXB550UNE, PMDXB600UNE, IRFZ44, PMF63UN, PMF77XN, PMF87EN, PMFPB8032XP, PMFPB8040XP, PMG45UN, PMGD130UN, PMGD175XN

Keywords - PMDXB950UPE MOSFET specs

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