PMN70XPE Todos los transistores

 

PMN70XPE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMN70XPE
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 101 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TSOP6
 

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PMN70XPE Datasheet (PDF)

 ..1. Size:201K  nxp
 pmn70xpe.pdf pdf_icon

PMN70XPE

PMN70XPE20 V, single P-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology

 0.1. Size:276K  nxp
 pmn70xpea.pdf pdf_icon

PMN70XPE

PMN70XPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Fast switching Trench MOSFET technology 2 kV ESD protection

 7.1. Size:735K  nxp
 pmn70xp.pdf pdf_icon

PMN70XPE

PMN70XP20 V, P-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipat

 9.1. Size:265K  nxp
 pmn70epe.pdf pdf_icon

PMN70XPE

PMN70EPE30 V, P-channel Trench MOSFET23 May 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipati

MOSTRAR MÁS

Otros transistores... PMN27XPE , PMN27XPEA , PMN40UPE , PMN40UPEA , PMN42XPE , PMN42XPEA , PMN50UPE , PMN50XP , K3569 , PMN70XPEA , PMN80XP , PMPB10XNE , PMPB11EN , PMPB12UN , PMPB13XNE , PMPB15XN , PMPB15XP .

History: VBM16R04 | NTMFS015N10MCLT1G | VSP002N03MST-G | VSP002N03MS | 4N60G-TN3-R | AP9402GMT-HF

 

 
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