PMPB13XNE Todos los transistores

 

PMPB13XNE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB13XNE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: DFN2020MD-6
 

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PMPB13XNE Datasheet (PDF)

 ..1. Size:267K  nxp
 pmpb13xne.pdf pdf_icon

PMPB13XNE

PMPB13XNE30 V, single N-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack

 0.1. Size:294K  nxp
 pmpb13xnea.pdf pdf_icon

PMPB13XNE

PMPB13XNEA30 V, N-channel Trench MOSFET10 September 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank

 8.1. Size:325K  nxp
 pmpb13up.pdf pdf_icon

PMPB13XNE

PMPB13UP12 V, P-channel Trench MOSFET4 September 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks f

 9.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB13XNE

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

MOSTRAR MÁS

Otros transistores... PMN50UPE , PMN50XP , PMN70XPE , PMN70XPEA , PMN80XP , PMPB10XNE , PMPB11EN , PMPB12UN , IRF4905 , PMPB15XN , PMPB15XP , PMPB16XN , PMPB19XP , PMPB20EN , PMPB20UN , PMPB20XPE , PMPB215ENEA .

History: IPA057N08N3G

 

 
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