PMPB13XNE. Аналоги и основные параметры
Наименование производителя: PMPB13XNE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 1.7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 155 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: DFN2020MD-6
Аналог (замена) для PMPB13XNE
- подборⓘ MOSFET транзистора по параметрам
PMPB13XNE даташит
..1. Size:267K nxp
pmpb13xne.pdf 
PMPB13XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack
0.1. Size:294K nxp
pmpb13xnea.pdf 
PMPB13XNEA 30 V, N-channel Trench MOSFET 10 September 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank
8.1. Size:325K nxp
pmpb13up.pdf 
PMPB13UP 12 V, P-channel Trench MOSFET 4 September 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks f
9.1. Size:321K nxp
pmpb100xpea.pdf 
PMPB100XPEA 20 V, P-channel Trench MOSFET 13 November 2019 Product data sheet 1. General Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S
9.2. Size:290K nxp
pmpb12unea.pdf 
PMPB12UNEA 20 V, N-channel Trench MOSFET 26 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
9.3. Size:742K nxp
pmpb12une.pdf 
PMPB12UNE 20 V, N-channel Trench MOSFET 12 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for ex
9.4. Size:227K nxp
pmpb15xn.pdf 
PMPB15XN 20 V, single N-channel Trench MOSFET 13 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless
9.5. Size:316K nxp
pmpb100ene.pdf 
PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic
9.6. Size:247K nxp
pmpb10xne.pdf 
PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult
9.7. Size:298K nxp
pmpb15xpa.pdf 
PMPB15XPA 12 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for
9.8. Size:308K nxp
pmpb16ep.pdf 
PMPB16EP 30 V, P-channel Trench MOSFET 24 September 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Side wettable flanks
9.9. Size:231K nxp
pmpb12un.pdf 
PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Very fast switching S
9.10. Size:238K nxp
pmpb16xn.pdf 
PMPB16XN 30 V, single N-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless
9.11. Size:314K nxp
pmpb10up.pdf 
PMPB10UP 12 V, P-channel Trench MOSFET 24 January 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
9.12. Size:252K nxp
pmpb15xp.pdf 
PMPB15XP 12 V, single P-channel Trench MOSFET 22 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.5 kV ESD protection (human body model) Tren
9.13. Size:340K nxp
pmpb14xp.pdf 
PMPB14XP 12 V, P-channel Trench MOSFET 3 July 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for op
9.14. Size:247K nxp
pmpb19xp.pdf 
PMPB19XP 20 V, single P-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless
9.15. Size:266K nxp
pmpb11en.pdf 
PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t
9.16. Size:294K nxp
pmpb10xnea.pdf 
PMPB10XNEA 20 V, N-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
9.17. Size:340K nxp
pmpb10en.pdf 
PMPB10EN 30 V, N-channel MOSFET 10 July 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology
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