PMPB15XP Todos los transistores

 

PMPB15XP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB15XP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: DFN2020MD-6
 

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PMPB15XP Datasheet (PDF)

 ..1. Size:252K  nxp
 pmpb15xp.pdf pdf_icon

PMPB15XP

PMPB15XP12 V, single P-channel Trench MOSFET22 November 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 1.5 kV ESD protection (human body model) Tren

 0.1. Size:298K  nxp
 pmpb15xpa.pdf pdf_icon

PMPB15XP

PMPB15XPA12 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for

 7.1. Size:227K  nxp
 pmpb15xn.pdf pdf_icon

PMPB15XP

PMPB15XN20 V, single N-channel Trench MOSFET13 September 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 9.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB15XP

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

MOSTRAR MÁS

Otros transistores... PMN70XPE , PMN70XPEA , PMN80XP , PMPB10XNE , PMPB11EN , PMPB12UN , PMPB13XNE , PMPB15XN , AO3400 , PMPB16XN , PMPB19XP , PMPB20EN , PMPB20UN , PMPB20XPE , PMPB215ENEA , PMPB23XNE , PMPB27EP .

History: 2SK869 | PSMN6R4-30MLD | MEE4294-G | NCEP40T13AGU | CJ3404 | SL3415 | HAT2179R

 

 
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