PMPB33XN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMPB33XN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 57 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
Paquete / Cubierta: DFN2020MD-6
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PMPB33XN Datasheet (PDF)
pmpb33xn.pdf

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pmpb33xp.pdf

PMPB33XP20 V, single P-channel Trench MOSFET5 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless u
pmpb30xpe.pdf

PMPB30XPE20 V, P-channel Trench MOSFET26 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD pl
Otros transistores... PMPB20EN , PMPB20UN , PMPB20XPE , PMPB215ENEA , PMPB23XNE , PMPB27EP , PMPB29XNE , PMPB29XPE , IRF530 , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE .
History: AP01L60H | BSS806NE | 4N60KL-TMS-T | IRFU220NPBF | NTD5807NT4G | RU3710S | SIHF9Z24L
History: AP01L60H | BSS806NE | 4N60KL-TMS-T | IRFU220NPBF | NTD5807NT4G | RU3710S | SIHF9Z24L



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