PMPB33XN
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB33XN
Marking Code: 1P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 4.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.1
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 57
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047
Ohm
Package: DFN2020MD-6
PMPB33XN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB33XN
Datasheet (PDF)
..1. Size:228K nxp
pmpb33xn.pdf
PMPB33XN30 V single N-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Very fast switching S
7.1. Size:243K nxp
pmpb33xp.pdf
PMPB33XP20 V, single P-channel Trench MOSFET5 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless u
9.1. Size:300K nxp
pmpb30xpe.pdf
PMPB30XPE20 V, P-channel Trench MOSFET26 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD pl
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