PMPB43XPE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMPB43XPE

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 142 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: DFN2020MD-6

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PMPB43XPE datasheet

 ..1. Size:256K  nxp
 pmpb43xpe.pdf pdf_icon

PMPB43XPE

PMPB43XPE 20 V, single P-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protected Small and leadless ultra thin SMD plastic packa

 0.1. Size:280K  nxp
 pmpb43xpea.pdf pdf_icon

PMPB43XPE

PMPB43XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 9.1. Size:280K  nxp
 pmpb48epa.pdf pdf_icon

PMPB43XPE

PMPB48EPA 30 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection

 9.2. Size:235K  nxp
 pmpb48ep.pdf pdf_icon

PMPB43XPE

PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless

MOSTRAR MÁS

Otros transistores... PMPB215ENEA, PMPB23XNE, PMPB27EP, PMPB29XNE, PMPB29XPE, PMPB33XN, PMPB33XP, PMPB40SNA, IRF530, PMPB47XP, PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN