PMPB43XPE Datasheet and Replacement
Type Designator: PMPB43XPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 142 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: DFN2020MD-6
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PMPB43XPE Datasheet (PDF)
pmpb43xpe.pdf
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PMPB43XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
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pmpb48ep.pdf
PMPB48EP30 V, single P-channel Trench MOSFET10 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TSM4925DCS | HLML6401 | STP20N60M2-EP | TDM3430 | IRFB4110Q | IRFP3077 | AP85T03GH-HF
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History: TSM4925DCS | HLML6401 | STP20N60M2-EP | TDM3430 | IRFB4110Q | IRFP3077 | AP85T03GH-HF
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