PMPB43XPE Specs and Replacement

Type Designator: PMPB43XPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 142 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: DFN2020MD-6

PMPB43XPE substitution

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PMPB43XPE datasheet

 ..1. Size:256K  nxp
 pmpb43xpe.pdf pdf_icon

PMPB43XPE

PMPB43XPE 20 V, single P-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protected Small and leadless ultra thin SMD plastic packa... See More ⇒

 0.1. Size:280K  nxp
 pmpb43xpea.pdf pdf_icon

PMPB43XPE

PMPB43XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 9.1. Size:280K  nxp
 pmpb48epa.pdf pdf_icon

PMPB43XPE

PMPB48EPA 30 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection ... See More ⇒

 9.2. Size:235K  nxp
 pmpb48ep.pdf pdf_icon

PMPB43XPE

PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ... See More ⇒

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Detailed specifications: PMPB215ENEA, PMPB23XNE, PMPB27EP, PMPB29XNE, PMPB29XPE, PMPB33XN, PMPB33XP, PMPB40SNA, IRF530, PMPB47XP, PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN

Keywords - PMPB43XPE MOSFET specs

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