PMPB48EP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMPB48EP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.5 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: DFN2020MD-6
Búsqueda de reemplazo de PMPB48EP MOSFET
PMPB48EP Datasheet (PDF)
pmpb48ep.pdf

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pmpb48epa.pdf

PMPB48EPA30 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection
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pmpb47xp.pdf

PMPB47XP30 V, single P-channel Trench MOSFET5 December 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless ul
Otros transistores... PMPB27EP , PMPB29XNE , PMPB29XPE , PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , IRFP450 , PMPB85ENEA , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN .
History: CJQ9435 | IPA041N04NG | 2SK1524 | BRCS070N03DP
History: CJQ9435 | IPA041N04NG | 2SK1524 | BRCS070N03DP



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