JANSR2N7398 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: JANSR2N7398
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO205AF

Búsqueda de reemplazo de MOSFET JANSR2N7398

JANSR2N7398 Datasheet (PDF)

..1. Size:53K intersil
jansr2n7398.pdf

JANSR2N7398Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Even

4.1. Size:52K intersil
jansr2n7396.pdf

JANSR2N7396Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)t

4.2. Size:53K intersil
jansr2n7395.pdf

JANSR2N7395Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Ev

4.3. Size:52K intersil
jansr2n7399.pdf

JANSR2N7399Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)

Otros transistores... J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 , JANSR2N7396 , IRLB4132 , JANSR2N7399 , JANSR2N7400 , JANSR2N7401 , JANSR2N7402 , JANSR2N7403 , JANSR2N7404 , JANSR2N7405 , JANSR2N7406 .

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