JANSR2N7398. Аналоги и основные параметры

Наименование производителя: JANSR2N7398

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm

Тип корпуса: TO205AF

Аналог (замена) для JANSR2N7398

- подборⓘ MOSFET транзистора по параметрам

 

JANSR2N7398 даташит

 ..1. Size:53K  intersil
 jansr2n7398.pdf pdf_icon

JANSR2N7398

JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even

 4.1. Size:52K  intersil
 jansr2n7396.pdf pdf_icon

JANSR2N7398

JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t

 4.2. Size:53K  intersil
 jansr2n7395.pdf pdf_icon

JANSR2N7398

JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev

 4.3. Size:52K  intersil
 jansr2n7399.pdf pdf_icon

JANSR2N7398

JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292, JANSR2N7294, JANSR2N7395, JANSR2N7396, IRF630, JANSR2N7399, JANSR2N7400, JANSR2N7401, JANSR2N7402, JANSR2N7403, JANSR2N7404, JANSR2N7405, JANSR2N7406