PMV65XPE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV65XPE

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm

Encapsulados: TO-236AB

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PMV65XPE datasheet

 ..1. Size:235K  nxp
 pmv65xpe.pdf pdf_icon

PMV65XPE

PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot = 89

 0.1. Size:238K  nxp
 pmv65xpea.pdf pdf_icon

PMV65XPE

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot

 7.1. Size:79K  philips
 pmv65xp.pdf pdf_icon

PMV65XPE

PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low threshold voltage Low on-state resistance. 1.3 Applications Low power DC-to-DC converters Battery management Load sw

 7.2. Size:264K  nxp
 pmv65xp.pdf pdf_icon

PMV65XPE

PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applicati

MOSTRAR MÁS

Otros transistores... PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2, PMV45EN2, PMV48XPA, PMV50XP, IRF2807, PMV65XPEA, PMV75UP, PMXB120EPE, PMXB350UPE, PMXB360ENEA, PMXB40UNE, PMXB43UNE, PMXB56EN