All MOSFET. PMV65XPE Datasheet

 

PMV65XPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV65XPE
   Marking Code: *KE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO-236AB

 PMV65XPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV65XPE Datasheet (PDF)

 ..1. Size:235K  nxp
 pmv65xpe.pdf

PMV65XPE PMV65XPE

PMV65XPE20 V, P-channel Trench MOSFET25 April 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 89

 0.1. Size:238K  nxp
 pmv65xpea.pdf

PMV65XPE PMV65XPE

PMV65XPEA20 V, P-channel Trench MOSFET27 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot

 7.1. Size:79K  philips
 pmv65xp.pdf

PMV65XPE PMV65XPE

PMV65XPP-channel TrenchMOS extremely low level FETRev. 01 28 September 2004 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low threshold voltage Low on-state resistance.1.3 Applications Low power DC-to-DC converters Battery management Load sw

 7.2. Size:264K  nxp
 pmv65xp.pdf

PMV65XPE PMV65XPE

PMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology3. Applicati

 7.3. Size:324K  tysemi
 pmv65xp.pdf

PMV65XPE PMV65XPE

Product specificationPMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET t

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STP30N05FI

 

 
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