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PMV65XPEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV65XPEA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: TO-236AB
 

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PMV65XPEA Datasheet (PDF)

 ..1. Size:238K  nxp
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PMV65XPEA

PMV65XPEA20 V, P-channel Trench MOSFET27 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot

 6.1. Size:235K  nxp
 pmv65xpe.pdf pdf_icon

PMV65XPEA

PMV65XPE20 V, P-channel Trench MOSFET25 April 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 89

 7.1. Size:79K  philips
 pmv65xp.pdf pdf_icon

PMV65XPEA

PMV65XPP-channel TrenchMOS extremely low level FETRev. 01 28 September 2004 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low threshold voltage Low on-state resistance.1.3 Applications Low power DC-to-DC converters Battery management Load sw

 7.2. Size:264K  nxp
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PMV65XPEA

PMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology3. Applicati

MOSTRAR MÁS

Otros transistores... PMV27UPE , PMV30UN2 , PMV37EN2 , PMV40UN2 , PMV45EN2 , PMV48XPA , PMV50XP , PMV65XPE , IRF2807 , PMV75UP , PMXB120EPE , PMXB350UPE , PMXB360ENEA , PMXB40UNE , PMXB43UNE , PMXB56EN , PMXB65ENE .

History: WMJ36N60F2 | WMN15N65C4 | CEU12N10L | IRFB3607 | 2N60L-TF1-T | INK0103AM1 | 2SK3078

 

 
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