JANSR2N7400 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JANSR2N7400

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm

Encapsulados: TO257AA

 Búsqueda de reemplazo de JANSR2N7400 MOSFET

- Selecciónⓘ de transistores por parámetros

 

JANSR2N7400 datasheet

 ..1. Size:51K  intersil
 jansr2n7400.pdf pdf_icon

JANSR2N7400

JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t

 4.1. Size:52K  intersil
 jansr2n7403.pdf pdf_icon

JANSR2N7400

JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

 4.2. Size:52K  intersil
 jansr2n7406.pdf pdf_icon

JANSR2N7400

JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

 4.3. Size:52K  intersil
 jansr2n7405.pdf pdf_icon

JANSR2N7400

JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA

MOSTRAR MÁS

Otros transistores... JANSR2N7275, JANSR2N7278, JANSR2N7292, JANSR2N7294, JANSR2N7395, JANSR2N7396, JANSR2N7398, JANSR2N7399, AON7408, JANSR2N7401, JANSR2N7402, JANSR2N7403, JANSR2N7404, JANSR2N7405, JANSR2N7406, JANSR2N7410, JANSR2N7411