JANSR2N7400
MOSFET. Datasheet pdf. Equivalent
Type Designator: JANSR2N7400
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.44
Ohm
Package:
TO257AA
JANSR2N7400
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JANSR2N7400
Datasheet (PDF)
..1. Size:51K intersil
jansr2n7400.pdf 
JANSR2N7400Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)t
4.1. Size:52K intersil
jansr2n7403.pdf
JANSR2N7403Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
4.2. Size:52K intersil
jansr2n7406.pdf
JANSR2N7406Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)
4.3. Size:52K intersil
jansr2n7405.pdf
JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA
4.4. Size:45K intersil
jansr2n7402.pdf
JANSR2N7402Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)tio
4.5. Size:52K intersil
jansr2n7404.pdf
JANSR2N7404Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 15A, -200V, rDS(ON) = 0.290 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
4.6. Size:65K intersil
jansr2n7401.pdf
JANSR2N7401August 1998 File Number 4571Formerly FSS234R46A, 250V, 0.600 Ohm, Rad Hard, FeaturesN-Channel Power MOSFET 6A, 250V, rDS(ON) = 0.600The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military space applications.
Datasheet: JANSR2N7275
, JANSR2N7278
, JANSR2N7292
, JANSR2N7294
, JANSR2N7395
, JANSR2N7396
, JANSR2N7398
, JANSR2N7399
, IRFP260
, JANSR2N7401
, JANSR2N7402
, JANSR2N7403
, JANSR2N7404
, JANSR2N7405
, JANSR2N7406
, JANSR2N7410
, JANSR2N7411
.
