JANSR2N7401 Todos los transistores

 

JANSR2N7401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JANSR2N7401
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO257AA
 

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JANSR2N7401 Datasheet (PDF)

 ..1. Size:65K  intersil
jansr2n7401.pdf pdf_icon

JANSR2N7401

JANSR2N7401August 1998 File Number 4571Formerly FSS234R46A, 250V, 0.600 Ohm, Rad Hard, FeaturesN-Channel Power MOSFET 6A, 250V, rDS(ON) = 0.600The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military space applications.

 4.1. Size:52K  intersil
jansr2n7403.pdf pdf_icon

JANSR2N7401

JANSR2N7403Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

 4.2. Size:52K  intersil
jansr2n7406.pdf pdf_icon

JANSR2N7401

JANSR2N7406Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)

 4.3. Size:52K  intersil
jansr2n7405.pdf pdf_icon

JANSR2N7401

JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

Otros transistores... JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 , JANSR2N7396 , JANSR2N7398 , JANSR2N7399 , JANSR2N7400 , IRFP260 , JANSR2N7402 , JANSR2N7403 , JANSR2N7404 , JANSR2N7405 , JANSR2N7406 , JANSR2N7410 , JANSR2N7411 , KF907 .

History: IXTP30N08MB | DMP2104V

 

 
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