JANSR2N7401 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: JANSR2N7401
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO257AA
Аналог (замена) для JANSR2N7401
JANSR2N7401 Datasheet (PDF)
jansr2n7401.pdf
JANSR2N7401August 1998 File Number 4571Formerly FSS234R46A, 250V, 0.600 Ohm, Rad Hard, FeaturesN-Channel Power MOSFET 6A, 250V, rDS(ON) = 0.600The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military space applications.
jansr2n7403.pdf
JANSR2N7403Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
jansr2n7406.pdf
JANSR2N7406Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)
jansr2n7405.pdf
JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA
jansr2n7402.pdf
JANSR2N7402Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)tio
jansr2n7404.pdf
JANSR2N7404Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 15A, -200V, rDS(ON) = 0.290 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
jansr2n7400.pdf
JANSR2N7400Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)t
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918