PNM523T201E0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PNM523T201E0 Datasheet (PDF)

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PNM523T201E0 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D0.2@ V =4.5V GSG1 20 0.25@ VGS=2.5V 1 0.31@ V =1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V 20

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PNM523T703E0-2 N-Channel MOSFET Description PNM523T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() VGS(th)(V) ID(A) G1 40 2.0@ VGS=10V 0.5 to 1.3 0.18 S2 Electrical characteristics per line@25( unless otherwise specifi

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pnm523t30v01.pdf pdf_icon

PNM523T30V01N-Channel MOSFETDescriptionPNM523T30V01 is designed for high speed switching applicationsThe enhancement mode MOS is extremely high density cell and low on-resistance.D3MOSFET Product SummaryV (V) R () V (V) I (A)DS DS(on) GS(th) D30 7@ V =2.5V,I =10mA 0.5 to 1.5 0.1GS DG1S2Electrical characteristics per line@25( unless otherwise spec

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