PNM523T201E0 Specs and Replacement
Type Designator: PNM523T201E0
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SOT-523
PNM523T201E0 substitution
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PNM523T201E0 datasheet
pnm523t201e0.pdf
PNM523T201E0 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D 0.2@ V =4.5V GS G 1 20 0.25@ VGS=2.5V 1 0.31@ V =1.8V GS S 2 Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V 20... See More ⇒
pnm523t703e0-2.pdf
PNM523T703E0-2 N-Channel MOSFET Description PNM523T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) VGS(th)(V) ID(A) G 1 40 2.0@ VGS=10V 0.5 to 1.3 0.18 S 2 Electrical characteristics per line@25 ( unless otherwise specifi... See More ⇒
pnm523t30v01.pdf
PNM523T30V01 N-Channel MOSFET Description PNM523T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) V (V) I (A) DS DS(on) GS(th) D 30 7@ V =2.5V,I =10mA 0.5 to 1.5 0.1 GS D G 1 S 2 Electrical characteristics per line@25 ( unless otherwise spec... See More ⇒
Detailed specifications: PMZB420UN, PMZB550UNE, PMZB600UNE, PMZB670UPE, PMZB790SN, PMZB950UPE, PNM23T100V6, PNM23T703E0-2, AO3400, PNM523T703E0-2, PNM723T201E0, PNM723T703E0-2, PNM8N30V60, PNM8P30V12, PNM8P30V20, PNMDP100V10, PNMDP30V60
Keywords - PNM523T201E0 MOSFET specs
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