PNMT60V3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PNMT60V3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.04 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET PNMT60V3

PNMT60V3 Datasheet (PDF)

..1. Size:121K prisemi
pnmt60v3.pdf

PNMT60V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) G1 60 0.096@ VGS=4.5V 3S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF/ON CHARACTE

7.1. Size:109K prisemi
pnmt60v02.pdf

PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() VGS(th)(V) ID(A) G1 60 7.5@ VGS=10V 0.5 to 1.5 0.18 S2 Electrical characteristics per line@25( unless otherwise specified) Par

7.2. Size:168K prisemi
pnmt60v02e.pdf

PNMT60V02EN-Channel MOSFETDescriptionPNMT60V02E is designed for high speed switching applicationsThe enhancement mode MOS is extremely high density cell and low on-resistance.D3MOSFET Product SummaryV (V) R () V (V) I (A)DS DS(on) GS(th) DG160 7.5@ V =10V 0.5 to 1.5 0.18GSS2Electrical characteristics per line@25( unless otherwise specified)Para

9.1. Size:241K prisemi
pnmt6n2.pdf

PNMT6N2Transistor with N-MOSFETFeatureTop ViewThis device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.6 5C 4PNMT6N2 is composed by a transistor and a MOSFET C STransistor:8(B/D)7(C) Very low collector to emitter saturation voltage DC current gain >1001 23E E G 3A continuous collector current PNP epitaxial

9.2. Size:252K prisemi
pnmt6n1.pdf

PNMT6N1Transistor with N-MOSFETFeatureTop ViewThis device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.1PNMT6N1 is composed by a transistor and a MOSFET 6ECTransistor:2B5G3D4S Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar

9.3. Size:230K prisemi
pnmt6n1-lb.pdf

PNMT6N1-LB Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. E 1PNMT6N1-LB is composed by a transistor and a MOSFET 6C Transistor: B 2G5SD 3 4 Very low collector to emitter saturation voltage DC current gain

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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