PNMT60V3 Specs and Replacement

Type Designator: PNMT60V3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.04 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-23

PNMT60V3 substitution

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PNMT60V3 datasheet

 ..1. Size:121K  prisemi
 pnmt60v3.pdf pdf_icon

PNMT60V3

PNMT60V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 60 0.096@ VGS=4.5V 3 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF/ON CHARACTE... See More ⇒

 7.1. Size:109K  prisemi
 pnmt60v02.pdf pdf_icon

PNMT60V3

PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) VGS(th)(V) ID(A) G 1 60 7.5@ VGS=10V 0.5 to 1.5 0.18 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Par... See More ⇒

 7.2. Size:168K  prisemi
 pnmt60v02e.pdf pdf_icon

PNMT60V3

PNMT60V02E N-Channel MOSFET Description PNMT60V02E is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) V (V) I (A) DS DS(on) GS(th) D G 1 60 7.5@ V =10V 0.5 to 1.5 0.18 GS S 2 Electrical characteristics per line@25 ( unless otherwise specified) Para... See More ⇒

 9.1. Size:241K  prisemi
 pnmt6n2.pdf pdf_icon

PNMT60V3

PNMT6N2 Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 6 5 C 4 PNMT6N2 is composed by a transistor and a MOSFET C S Transistor 8(B/D) 7(C) Very low collector to emitter saturation voltage DC current gain >100 1 2 3 E E G 3A continuous collector current PNP epitaxial... See More ⇒

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Detailed specifications: PNMIP600V2, PNMIP600V4, PNMT20V3, PNMT30V6, PNMT45V2, PNMT50V02E, PNMT60V02, PNMT60V02E, 4435, PNMTO600V2, PNMTO600V4, PNMTO600V5, PNMTO600V7, PNMTO600V8, PNMTOF600V2, PNMTOF600V4, PNMTOF600V5

Keywords - PNMT60V3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.