JANSR2N7406 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JANSR2N7406

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO254AA

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JANSR2N7406 datasheet

 ..1. Size:52K  intersil
 jansr2n7406.pdf pdf_icon

JANSR2N7406

JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

 4.1. Size:52K  intersil
 jansr2n7403.pdf pdf_icon

JANSR2N7406

JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

 4.2. Size:52K  intersil
 jansr2n7405.pdf pdf_icon

JANSR2N7406

JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA

 4.3. Size:45K  intersil
 jansr2n7402.pdf pdf_icon

JANSR2N7406

JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) tio

MOSTRAR MÁS

Otros transistores... JANSR2N7398, JANSR2N7399, JANSR2N7400, JANSR2N7401, JANSR2N7402, JANSR2N7403, JANSR2N7404, JANSR2N7405, IRLB4132, JANSR2N7410, JANSR2N7411, KF907, KF910, KP101D, KP101E, KP101G, KP103E