JANSR2N7406. Аналоги и основные параметры

Наименование производителя: JANSR2N7406

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 5 V

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: TO254AA

Аналог (замена) для JANSR2N7406

- подборⓘ MOSFET транзистора по параметрам

 

JANSR2N7406 даташит

 ..1. Size:52K  intersil
 jansr2n7406.pdf pdf_icon

JANSR2N7406

JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

 4.1. Size:52K  intersil
 jansr2n7403.pdf pdf_icon

JANSR2N7406

JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

 4.2. Size:52K  intersil
 jansr2n7405.pdf pdf_icon

JANSR2N7406

JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA

 4.3. Size:45K  intersil
 jansr2n7402.pdf pdf_icon

JANSR2N7406

JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) tio

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... JANSR2N7398, JANSR2N7399, JANSR2N7400, JANSR2N7401, JANSR2N7402, JANSR2N7403, JANSR2N7404, JANSR2N7405, IRLB4132, JANSR2N7410, JANSR2N7411, KF907, KF910, KP101D, KP101E, KP101G, KP103E