JANSR2N7410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JANSR2N7410Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard,March 1998 N-Channel Power MOSFETFeatures Description 3.5A, 100V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7411Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil Corporationhasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si

JANSR2N7403Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7406Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)

JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

JANSR2N7402Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)tio

JANSR2N7404Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 15A, -200V, rDS(ON) = 0.290 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7400Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)t

JANSR2N7401August 1998 File Number 4571Formerly FSS234R46A, 250V, 0.600 Ohm, Rad Hard, FeaturesN-Channel Power MOSFET 6A, 250V, rDS(ON) = 0.600The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military space applications.