JANSR2N7410 - описание и поиск аналогов

JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, March 1998 N-Channel Power MOSFET Features Description 3.5A, 100V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si

JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA

JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) tio

JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 15A, -200V, rDS(ON) = 0.290 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t