PSMN003-30P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN003-30P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 170 nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 1930 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET PSMN003-30P

PSMN003-30P Datasheet (PDF)

..1. Size:291K nxp
psmn003-30b psmn003-30p.pdf

PSMN003-30P; PSMN003-30BN-channel enhancement mode field-effect transistorRev. 01 23 October 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PSMN003-30P in SOT78 (TO-220AB)PSMN003-30B in SOT404 (D2-PAK)2. Features Low on-state resistance Fast switching.3. Applic

6.1. Size:99K philips
psmn003-25w 3.pdf

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN003-25W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistanceRDS(ON) 3.2 m (VGS = 10 V)gRDS(ON) 3.5 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT429 (TO247

7.1. Size:291K philips
psmn003 30p-b.pdf

8.1. Size:271K philips
psmn009 100p 100b-01.pdf

PSMN009-100P/100BN-channel enhancement mode field-effect transistorRev. 01 29 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN009-100P in SOT78 (TO-220AB)PSMN009-100B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications

8.2. Size:105K philips
psmn004-25b p 4.pdf

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistanceRDS(ON) 4 m (VGS = 10 V)gRDS(ON) 5 m (VGS = 5 V)sGENERAL DESCRIPTIONSiliconMAX pr

8.3. Size:120K philips
psmn005-55b p hg.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-55B; PSMN005-55PN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationPSMN005-55B;N-channel logic level TrenchMOS(TM) transistor PSMN005-55PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit

8.4. Size:148K philips
psmn005-25d.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-25DN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationN-channel logic level TrenchMOS(TM) transistor PSMN005-25DFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

8.5. Size:108K philips
psmn008 75p 75b.pdf

PSMN008-75P/75BTrenchMOS standard level FETRev. 03 08 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Fast switching Low on-state resistance Avalanche ruggedness rated Low thermal resistance.1.3 Applications D

8.6. Size:106K philips
psmn008-75p.pdf

8.7. Size:92K philips
psmn009-100w.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 AgRDS(ON) 9 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

8.8. Size:149K philips
psmn005-25d hg 5.pdf

8.9. Size:294K philips
psmn004-36b.pdf

PSMN004-36P/36BN-channel enhancement mode field-effect transistorRev. 01 19 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PSMN004-36P in SOT78 (TO-220AB)PSMN004-36B in SOT404 (D2-PAK).2. Features Very low on-state resistance Fast switching.3. Applicat

8.10. Size:271K philips
psmn005-75p psmn005 75p 75b.pdf

PSMN005-75P/75BN-channel enhancement mode field-effect transistorRev. 01 26 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN005-75P in SOT78 (TO-220AB)PSMN005-75B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications Hi

8.11. Size:119K philips
psmn005-55b psmn005-55p.pdf

8.12. Size:96K philips
psmn004-55w.pdf

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V)gRDS(ON) 4.5 m (VGS = 5 V)sRDS(ON) 5

8.13. Size:685K nxp
psmn009-100b.pdf

PSMN009-100BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 July 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

8.14. Size:712K nxp
psmn004-60b.pdf

PSMN004-60BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 15 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

8.15. Size:713K nxp
psmn008-75b.pdf

PSMN008-75BN-channel TrenchMOS SiliconMAX standard level FETRev. 04 11 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

8.16. Size:771K nxp
psmn009-100p.pdf

PSMN009-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 4 27 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

8.17. Size:185K nxp
psmn005-30k.pdf

PSMN005-30KN-channel TrenchMOS SiliconMAX logic level FETRev. 2 22 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati

8.18. Size:682K nxp
psmn005-75p.pdf

PSMN005-75PN-channel TrenchMOS SiliconMAX standard level FETRev. 01 17 November 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

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