PSMN003-30P Specs and Replacement
Type Designator: PSMN003-30P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ -
Output Capacitance: 1930 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO-220AB
- MOSFET ⓘ Cross-Reference Search
PSMN003-30P datasheet
..1. Size:291K nxp
psmn003-30b psmn003-30p.pdf 
PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) 2. Features Low on-state resistance Fast switching. 3. Applic... See More ⇒
6.1. Size:99K philips
psmn003-25w 3.pdf
Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN003-25W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance RDS(ON) 3.2 m (VGS = 10 V) g RDS(ON) 3.5 m (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT429 (TO247... See More ⇒
7.1. Size:291K philips
psmn003 30p-b.pdf
PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) 2. Features Low on-state resistance Fast switching. 3. Applic... See More ⇒
8.1. Size:271K philips
psmn009 100p 100b-01.pdf
PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications ... See More ⇒
8.2. Size:105K philips
psmn004-25b p 4.pdf
Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance RDS(ON) 4 m (VGS = 10 V) g RDS(ON) 5 m (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX pr... See More ⇒
8.3. Size:120K philips
psmn005-55b p hg.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit... See More ⇒
8.4. Size:148K philips
psmn005-25d.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic ... See More ⇒
8.5. Size:108K philips
psmn008 75p 75b.pdf
PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Fast switching Low on-state resistance Avalanche ruggedness rated Low thermal resistance. 1.3 Applications D... See More ⇒
8.6. Size:106K philips
psmn008-75p.pdf
PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Fast switching Low on-state resistance Avalanche ruggedness rated Low thermal resistance. 1.3 Applications D... See More ⇒
8.7. Size:92K philips
psmn009-100w.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 A g RDS(ON) 9 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil... See More ⇒
8.8. Size:149K philips
psmn005-25d hg 5.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic ... See More ⇒
8.9. Size:294K philips
psmn004-36b.pdf
PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applicat... See More ⇒
8.10. Size:271K philips
psmn005-75p psmn005 75p 75b.pdf
PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications Hi... See More ⇒
8.11. Size:119K philips
psmn005-55b psmn005-55p.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit... See More ⇒
8.12. Size:96K philips
psmn004-55w.pdf
Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V) g RDS(ON) 4.5 m (VGS = 5 V) s RDS(ON) 5 ... See More ⇒
8.13. Size:685K nxp
psmn009-100b.pdf
PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 July 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic... See More ⇒
8.14. Size:712K nxp
psmn004-60b.pdf
PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 15 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap... See More ⇒
8.15. Size:713K nxp
psmn008-75b.pdf
PSMN008-75B N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 11 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap... See More ⇒
8.16. Size:771K nxp
psmn009-100p.pdf
PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 27 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap... See More ⇒
8.17. Size:185K nxp
psmn005-30k.pdf
PSMN005-30K N-channel TrenchMOS SiliconMAX logic level FET Rev. 2 22 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati... See More ⇒
8.18. Size:682K nxp
psmn005-75p.pdf
PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap... See More ⇒
Detailed specifications: PS8205A, PS8205B, PS90N80, PSMG100-05, PSMG150-01, PSMG50-05, PSMG60-08, PSMN003-30B, 60N06, PSMN004-36B, PSMN004-55W, PSMN005-25D, PSMN005-55B, PSMN005-55P, PSMN005-75P, PSMN008-75P, PSMN009-100W
Keywords - PSMN003-30P MOSFET specs
PSMN003-30P cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
