PSMN005-55B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN005-55B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 230 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 15 V
   Corriente continua de drenaje |Id|: 75 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 103 nC
   Tiempo de subida (tr): 180 nS
   Conductancia de drenaje-sustrato (Cd): 1500 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0058 Ohm
   Paquete / Cubierta: D2-PAK

Búsqueda de reemplazo de MOSFET PSMN005-55B

PSMN005-55B Datasheet (PDF)

..1. Size:120K philips
psmn005-55b p hg.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-55B; PSMN005-55PN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationPSMN005-55B;N-channel logic level TrenchMOS(TM) transistor PSMN005-55PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit

..2. Size:119K philips
psmn005-55b psmn005-55p.pdf

6.1. Size:148K philips
psmn005-25d.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-25DN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationN-channel logic level TrenchMOS(TM) transistor PSMN005-25DFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

6.2. Size:149K philips
psmn005-25d hg 5.pdf

6.3. Size:271K philips
psmn005-75p psmn005 75p 75b.pdf

PSMN005-75P/75BN-channel enhancement mode field-effect transistorRev. 01 26 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN005-75P in SOT78 (TO-220AB)PSMN005-75B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications Hi

6.4. Size:185K nxp
psmn005-30k.pdf

PSMN005-30KN-channel TrenchMOS SiliconMAX logic level FETRev. 2 22 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati

6.5. Size:682K nxp
psmn005-75p.pdf

PSMN005-75PN-channel TrenchMOS SiliconMAX standard level FETRev. 01 17 November 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

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