PSMN005-55B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN005-55B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 230 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 103 nC
trⓘ - Время нарастания: 180 ns
Cossⓘ - Выходная емкость: 1500 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для PSMN005-55B
PSMN005-55B Datasheet (PDF)
psmn005-55b p hg.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-55B; PSMN005-55PN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationPSMN005-55B;N-channel logic level TrenchMOS(TM) transistor PSMN005-55PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit
psmn005-55b psmn005-55p.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-55B; PSMN005-55PN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationPSMN005-55B;N-channel logic level TrenchMOS(TM) transistor PSMN005-55PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit
psmn005-25d.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-25DN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationN-channel logic level TrenchMOS(TM) transistor PSMN005-25DFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic
psmn005-25d hg 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-25DN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationN-channel logic level TrenchMOS(TM) transistor PSMN005-25DFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic
psmn005-75p psmn005 75p 75b.pdf
PSMN005-75P/75BN-channel enhancement mode field-effect transistorRev. 01 26 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN005-75P in SOT78 (TO-220AB)PSMN005-75B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications Hi
psmn005-30k.pdf
PSMN005-30KN-channel TrenchMOS SiliconMAX logic level FETRev. 2 22 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati
psmn005-75p.pdf
PSMN005-75PN-channel TrenchMOS SiliconMAX standard level FETRev. 01 17 November 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STT01L10 | PHK12NQ03LT
History: STT01L10 | PHK12NQ03LT
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918