PSMN015-60BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN015-60BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20.9 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 169 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: D2-PAK

Búsqueda de reemplazo de MOSFET PSMN015-60BS

PSMN015-60BS Datasheet (PDF)

..1. Size:201K nxp
psmn015-60bs.pdf

PSMN015-60BSN-channel 60 V 14.8 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

4.1. Size:190K philips
psmn015-60ps.pdf

PSMN015-60PSN-channel 60 V 14.8 m standard level MOSFETRev. 3 23 June 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to

4.2. Size:797K nxp
psmn015-60ps.pdf

6.1. Size:101K philips
psmn015-100p 100b.pdf

PSMN015-100P/100BN-channel TrenchMOS Standard level FETRev. 05 14 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Avalanche ruggedness rated.1.3 Applications DC-to-DC converters Switched-

6.2. Size:91K philips
psmn015-110p.pdf

PSMN015-110PTrenchMOS Standard level FETRev. 01 08 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Low gate charge.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4

6.3. Size:153K philips
psmn015-100 series hg 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPSMN015-100B; PSMN015-100PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma

6.4. Size:685K nxp
psmn015-110p.pdf

PSMN015-110PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 October 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

6.5. Size:707K nxp
psmn015-100p.pdf

PSMN015-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 06 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

6.6. Size:720K nxp
psmn015-100yl.pdf

PSMN015-100YLN-channel 100 V, 15 m logic level MOSFET in LFPAK564 November 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

Liste

Recientemente añadidas las descripciónes de los transistores: