PSMN015-60BS. Аналоги и основные параметры

Наименование производителя: PSMN015-60BS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 86 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 169 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для PSMN015-60BS

- подборⓘ MOSFET транзистора по параметрам

 

PSMN015-60BS даташит

 ..1. Size:201K  nxp
psmn015-60bs.pdfpdf_icon

PSMN015-60BS

PSMN015-60BS N-channel 60 V 14.8 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 4.1. Size:190K  philips
psmn015-60ps.pdfpdf_icon

PSMN015-60BS

PSMN015-60PS N-channel 60 V 14.8 m standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 4.2. Size:797K  nxp
psmn015-60ps.pdfpdf_icon

PSMN015-60BS

PSMN015-60PS N-channel 60 V 14.8 m standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 6.1. Size:101K  philips
psmn015-100p 100b.pdfpdf_icon

PSMN015-60BS

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-

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