PSMN015-60BS. Аналоги и основные параметры
Наименование производителя: PSMN015-60BS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 86 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 169 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для PSMN015-60BS
- подборⓘ MOSFET транзистора по параметрам
PSMN015-60BS даташит
psmn015-60bs.pdf
PSMN015-60BS N-channel 60 V 14.8 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien
psmn015-60ps.pdf
PSMN015-60PS N-channel 60 V 14.8 m standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to
psmn015-60ps.pdf
PSMN015-60PS N-channel 60 V 14.8 m standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to
psmn015-100p 100b.pdf
PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-
Другие IGBT... PSMN011-30YLC, PSMN011-60ML, PSMN011-60MS, PSMN012-25YLC, PSMN012-80BS, PSMN013-100XS, PSMN013-100YSE, PSMN013-30MLC, IRFP260N, PSMN016-100BS, WPH4003, WT3139K, WTC3401, WTX1013, WVM11N80, WVM12N10, WVM13N50
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
s9014 transistor | bc547 transistor datasheet | c945 datasheet | irfp260 | ksc2383 | 2n3773 | b772 transistor | 50n06









