WVM30N30 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WVM30N30
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de WVM30N30 MOSFET
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WVM30N30 datasheet
wvm30n30.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N30 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe
wvm30n20.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe
wvm30n10.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N10 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe
Otros transistores... WVM20N50, WVM20N8, WVM21N50, WVM25N40, WVM28N10, WVM3.9N100, WVM30N10, WVM30N20, IRFP260, WVM3N10, WVM3N30, WVM40N20, WVM4N20, WVM4N50, WVM55N10, WVM6N100, WVM7N12
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