WVM30N30 Specs and Replacement
Type Designator: WVM30N30
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220
WVM30N30 substitution
- MOSFET ⓘ Cross-Reference Search
WVM30N30 datasheet
wvm30n30.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N30 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe... See More ⇒
wvm30n20.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N20 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe... See More ⇒
wvm30n10.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM30N10 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe... See More ⇒
Detailed specifications: WVM20N50, WVM20N8, WVM21N50, WVM25N40, WVM28N10, WVM3.9N100, WVM30N10, WVM30N20, IRFP260, WVM3N10, WVM3N30, WVM40N20, WVM4N20, WVM4N50, WVM55N10, WVM6N100, WVM7N12
Keywords - WVM30N30 MOSFET specs
WVM30N30 cross reference
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WVM30N30 replacement
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