PSMN017-80BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN017-80BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 103 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 22 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 154 pF
Resistencia entre drenaje y fuente RDS(on): 0.017 Ohm
Paquete / Cubierta: D2PAK
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PSMN017-80BS Datasheet (PDF)
psmn017-80bs.pdf
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PSMN017-80BSN-channel 80 V 17 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn017-80ps.pdf
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PSMN017-80PSN-channel 80 V 17 m standard level MOSFET in TO220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic
psmn017-60ys.pdf
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PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn017-30ll.pdf
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PSMN017-30LLN-channel QFN3333 30 V 17 m logic level MOSFETRev. 03 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
psmn017-30pl.pdf
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PSMN017-30PLN-channel 30 V 17 m logic level MOSFET in TO220Rev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
psmn017-30el.pdf
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PSMN017-30ELN-channel 30 V 17 m logic level MOSFET in I2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
psmn017-60ys.pdf
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PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn017-30bl.pdf
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PSMN017-30BLN-channel 30 V 17 m logic level MOSFET in D2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
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