PSMN017-80BS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN017-80BS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 103 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 154 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN017-80BS
PSMN017-80BS Datasheet (PDF)
psmn017-80bs.pdf

PSMN017-80BSN-channel 80 V 17 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn017-80ps.pdf

PSMN017-80PSN-channel 80 V 17 m standard level MOSFET in TO220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic
psmn017-60ys.pdf

PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn017-30ll.pdf

PSMN017-30LLN-channel QFN3333 30 V 17 m logic level MOSFETRev. 03 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
Другие MOSFET... WVM8N20 , WVM8N60 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , IRF1407 , PSMN020-150W , PSMN020-30MLC , PSMN022-30BL , PSMN023-40YLC , PSMN027-100BS , PSMN027-100XS , PSMN034-100BS , PSMN038-100YL .
History: H8N60F
History: H8N60F



Список транзисторов
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