PSMN017-80BS. Аналоги и основные параметры
Наименование производителя: PSMN017-80BS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 103 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 154 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN017-80BS
- подборⓘ MOSFET транзистора по параметрам
PSMN017-80BS даташит
psmn017-80bs.pdf
PSMN017-80BS N-channel 80 V 17 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
psmn017-80ps.pdf
PSMN017-80PS N-channel 80 V 17 m standard level MOSFET in TO220 Rev. 3 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic
psmn017-60ys.pdf
PSMN017-60YS N-channel LFPAK 60 V 15.7 m standard level MOSFET Rev. 02 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn017-30ll.pdf
PSMN017-30LL N-channel QFN3333 30 V 17 m logic level MOSFET Rev. 03 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due
Другие MOSFET... WVM8N20 , WVM8N60 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , IRFP450 , PSMN020-150W , PSMN020-30MLC , PSMN022-30BL , PSMN023-40YLC , PSMN027-100BS , PSMN027-100XS , PSMN034-100BS , PSMN038-100YL .
History: MTM10N100E
History: MTM10N100E
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
9014 transistor | irfp260n datasheet | irfp250m | 2sk1058 | ss8550 | mje15033 | 2sc945 datasheet | a92 transistor








