PSMN020-150W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN020-150W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 300 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 73 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 79 nS
   Conductancia de drenaje-sustrato (Cd): 854 pF
   Resistencia entre drenaje y fuente RDS(on): 0.02 Ohm
   Paquete / Cubierta: TO-247

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PSMN020-150W Datasheet (PDF)

..1. Size:92K philips
psmn020-150w.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 AgRDS(ON) 20 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

5.1. Size:234K philips
psmn020-100ys.pdf

PSMN020-100YSN-channel 100V 20.5m standard level MOSFET in LFPAKRev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

5.2. Size:739K nxp
psmn020-100ys.pdf

PSMN020-100YSN-channel 100V 20.5m standard level MOSFET in LFPAK26 March 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low g

6.1. Size:274K nxp
psmn020-30mlc.pdf

PSMN020-30MLCN-channel 30 V 18.1 m logic level MOSFET in LFPAK33using TrenchMOS Technology4 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits

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