All MOSFET. PSMN020-150W Datasheet

 

PSMN020-150W Datasheet and Replacement


   Type Designator: PSMN020-150W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 854 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-247
 

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PSMN020-150W Datasheet (PDF)

 ..1. Size:92K  philips
psmn020-150w.pdf pdf_icon

PSMN020-150W

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 AgRDS(ON) 20 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

 5.1. Size:234K  philips
psmn020-100ys.pdf pdf_icon

PSMN020-150W

PSMN020-100YSN-channel 100V 20.5m standard level MOSFET in LFPAKRev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

 5.2. Size:739K  nxp
psmn020-100ys.pdf pdf_icon

PSMN020-150W

PSMN020-100YSN-channel 100V 20.5m standard level MOSFET in LFPAK26 March 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low g

 6.1. Size:274K  nxp
psmn020-30mlc.pdf pdf_icon

PSMN020-150W

PSMN020-30MLCN-channel 30 V 18.1 m logic level MOSFET in LFPAK33using TrenchMOS Technology4 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits

Datasheet: WVM8N60 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , PSMN017-80BS , IRFZ24N , PSMN020-30MLC , PSMN022-30BL , PSMN023-40YLC , PSMN027-100BS , PSMN027-100XS , PSMN034-100BS , PSMN038-100YL , PSMN040-100MSE .

History: NCE6802 | STM8501 | 2SK1324 | IRFS4127PBF | 2SK1401A | HCFL70R180 | FTD2017

Keywords - PSMN020-150W MOSFET datasheet

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