PSMN034-100BS Todos los transistores

 

PSMN034-100BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN034-100BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 94 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0345 Ohm
   Paquete / Cubierta: D2PAK
 

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Principales características: PSMN034-100BS

 ..1. Size:233K  nxp
 psmn034-100bs.pdf pdf_icon

PSMN034-100BS

PSMN034-100BS N-channel 100 V 34.5 m standard level MOSFET in D2PAK. Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 3.1. Size:246K  philips
 psmn034-100ps.pdf pdf_icon

PSMN034-100BS

PSMN034-100PS N-channel 100 V 34.5 m standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 3.2. Size:805K  nxp
 psmn034-100ps.pdf pdf_icon

PSMN034-100BS

PSMN034-100PS N-channel 100 V 34.5 m standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 3.3. Size:289K  inchange semiconductor
 psmn034-100ps.pdf pdf_icon

PSMN034-100BS

isc N-Channel MOSFET Transistor PSMN034-100PS FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

MOSTRAR MÁS

Otros transistores... PSMN017-30PL , PSMN017-80BS , PSMN020-150W , PSMN020-30MLC , PSMN022-30BL , PSMN023-40YLC , PSMN027-100BS , PSMN027-100XS , 2SK3568 , PSMN038-100YL , PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD .

History: NTRV4101P | SI7232DN | SI7252DP

 

 
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