PSMN034-100BS Todos los transistores

 

PSMN034-100BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN034-100BS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 86 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 32 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 23.8 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 94 pF

Resistencia drenaje-fuente RDS(on): 0.0345 Ohm

Empaquetado / Estuche: D2PAK

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PSMN034-100BS Datasheet (PDF)

1.1. psmn034-100bs.pdf Size:233K _update_mosfet

PSMN034-100BS
PSMN034-100BS

PSMN034-100BS N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficien

1.2. psmn034-100ps.pdf Size:246K _philips2

PSMN034-100BS
PSMN034-100BS

PSMN034-100PS N-channel 100 V 34.5 m? standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.1. psmn038-100yl.pdf Size:320K _update_mosfet

PSMN034-100BS
PSMN034-100BS

PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency

4.2. psmn039-100ys.pdf Size:236K _philips2

PSMN034-100BS
PSMN034-100BS

PSMN039-100YS N-channel LFPAK 100 V 39.5 m? standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

 4.3. psmn030-60ys.pdf Size:219K _philips2

PSMN034-100BS
PSMN034-100BS

PSMN030-60YS N-channel LFPAK 60 V 24.7 m? standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS prov

4.4. psmn035 150 series.pdf Size:297K _philips2

PSMN034-100BS
PSMN034-100BS

PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 22 February 2001 Product specification 1. Description SiliconMAX1 products use the latest TrenchMOS2 technology to achieve the lowest possible on-state resistance for each package. Product availability: PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D2-PAK). 2. Features Fast switching

 4.5. psmn035-150 series hg 3.pdf Size:152K _philips2

PSMN034-100BS
PSMN034-100BS

DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID

4.6. psmn030-150p.pdf Size:180K _philips2

PSMN034-100BS
PSMN034-100BS

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

4.7. psmn035-100ls.pdf Size:387K _philips2

PSMN034-100BS
PSMN034-100BS

PSMN035-100LS N-channel QFN3333 100 V 32m? standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency du

4.8. psmn038 100k.pdf Size:271K _nxp

PSMN034-100BS
PSMN034-100BS

PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switch

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