PSMN034-100BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN034-100BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 86 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 32 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 23.8 nC
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 94 pF
Resistencia drenaje-fuente RDS(on): 0.0345 Ohm
Empaquetado / Estuche: D2PAK
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PSMN034-100BS Datasheet (PDF)
1.1. psmn034-100bs.pdf 
Size:233K _update_mosfet
PSMN034-100BS N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien
1.2. psmn034-100ps.pdf Size:246K _philips2
PSMN034-100PS N-channel 100 V 34.5 m? standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
4.1. psmn038-100yl.pdf Size:320K _update_mosfet
PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency
4.2. psmn039-100ys.pdf Size:236K _philips2
PSMN039-100YS N-channel LFPAK 100 V 39.5 m? standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi
4.3. psmn030-60ys.pdf Size:219K _philips2
PSMN030-60YS N-channel LFPAK 60 V 24.7 m? standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS prov
4.4. psmn035 150 series.pdf Size:297K _philips2
PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 22 February 2001 Product specification 1. Description SiliconMAX1 products use the latest TrenchMOS2 technology to achieve the lowest possible on-state resistance for each package. Product availability: PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D2-PAK). 2. Features Fast switching
4.5. psmn035-150 series hg 3.pdf Size:152K _philips2
DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID
4.6. psmn030-150p.pdf Size:180K _philips2
PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic
4.7. psmn035-100ls.pdf Size:387K _philips2
PSMN035-100LS N-channel QFN3333 100 V 32m? standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency du
4.8. psmn038 100k.pdf Size:271K _nxp
PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switch
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