PSMN034-100BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN034-100BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 86 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 94 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0345 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de PSMN034-100BS MOSFET
PSMN034-100BS Datasheet (PDF)
psmn034-100bs.pdf
PSMN034-100BSN-channel 100 V 34.5 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn034-100ps.pdf
PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn034-100ps.pdf
PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
psmn034-100ps.pdf
isc N-Channel MOSFET Transistor PSMN034-100PSFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
Otros transistores... PSMN017-30PL , PSMN017-80BS , PSMN020-150W , PSMN020-30MLC , PSMN022-30BL , PSMN023-40YLC , PSMN027-100BS , PSMN027-100XS , AO3401 , PSMN038-100YL , PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD .
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