Справочник MOSFET. PSMN034-100BS

 

PSMN034-100BS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN034-100BS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 86 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 23.8 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 94 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0345 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN034-100BS

 

 

PSMN034-100BS Datasheet (PDF)

 ..1. Size:233K  nxp
 psmn034-100bs.pdf

PSMN034-100BS PSMN034-100BS

PSMN034-100BSN-channel 100 V 34.5 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 3.1. Size:246K  philips
 psmn034-100ps.pdf

PSMN034-100BS PSMN034-100BS

PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 3.2. Size:805K  nxp
 psmn034-100ps.pdf

PSMN034-100BS PSMN034-100BS

PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 3.3. Size:289K  inchange semiconductor
 psmn034-100ps.pdf

PSMN034-100BS PSMN034-100BS

isc N-Channel MOSFET Transistor PSMN034-100PSFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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