PSMN050-80BS Todos los transistores

 

PSMN050-80BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN050-80BS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm

Encapsulados: D2PAK

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PSMN050-80BS datasheet

 ..1. Size:230K  nxp
psmn050-80bs.pdf pdf_icon

PSMN050-80BS

PSMN050-80BS N-channel 80 V 46 m standard level MOSFET in D2PAK Rev. 1 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 4.1. Size:217K  philips
psmn050-80ps.pdf pdf_icon

PSMN050-80BS

PSMN050-80PS N-channel 80 V 50 m standard level MOSFET Rev. 01 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

 8.1. Size:196K  philips
psmn059-150y.pdf pdf_icon

PSMN050-80BS

PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 17 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 8.2. Size:172K  philips
psmn057-200p.pdf pdf_icon

PSMN050-80BS

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

Otros transistores... PSMN023-40YLC , PSMN027-100BS , PSMN027-100XS , PSMN034-100BS , PSMN038-100YL , PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , AO3407 , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , PSMN1R0-40YLD , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD .

History: PSMN041-80YL | BRCS20N03IP

 

 

 


History: PSMN041-80YL | BRCS20N03IP

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