PSMN050-80BS Todos los transistores

 

PSMN050-80BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN050-80BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: D2PAK
 

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PSMN050-80BS Datasheet (PDF)

 ..1. Size:230K  nxp
psmn050-80bs.pdf pdf_icon

PSMN050-80BS

PSMN050-80BSN-channel 80 V 46 m standard level MOSFET in D2PAKRev. 1 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 4.1. Size:217K  philips
psmn050-80ps.pdf pdf_icon

PSMN050-80BS

PSMN050-80PSN-channel 80 V 50 m standard level MOSFETRev. 01 10 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

 8.1. Size:196K  philips
psmn059-150y.pdf pdf_icon

PSMN050-80BS

PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FETRev. 03 17 March 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 8.2. Size:172K  philips
psmn057-200p.pdf pdf_icon

PSMN050-80BS

PSMN057-200PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 4 January 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

Otros transistores... PSMN023-40YLC , PSMN027-100BS , PSMN027-100XS , PSMN034-100BS , PSMN038-100YL , PSMN040-100MSE , PSMN040-200W , PSMN041-80YL , 7N60 , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , PSMN1R0-40YLD , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD .

History: 2SK3604-01S | AP80SL650AI

 

 
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