All MOSFET. PSMN050-80BS Datasheet

 

PSMN050-80BS MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN050-80BS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: D2PAK

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PSMN050-80BS Datasheet (PDF)

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