PSMN1R5-30BLE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R5-30BLE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 401 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 156.1 nS
Cossⓘ - Capacitancia de salida: 2741 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de PSMN1R5-30BLE MOSFET
PSMN1R5-30BLE Datasheet (PDF)
psmn1r5-30ble.pdf

PSMN1R5-30BLEN-channel 30 V 1.5 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe
psmn1r5-30ble.pdf

isc N-Channel MOSFET Transistor PSMN1R5-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn1r5-30yl.pdf

PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn1r5-30ylc.pdf

PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
Otros transistores... PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , PSMN1R0-40YLD , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD , PSMN1R4-40YLD , IRF520 , PSMN1R6-30BL , PSMN1R6-40YLC , PSMN1R8-30BL , PSMN1R8-40YLC , PSMN1R9-40PL , PSMN2R0-30BL , PSMN2R0-30YLD , PSMN2R0-30YLE .
History: AO4294 | 2SK1608 | SM1A18NSQG | NCE8205I | FHF10N65A
History: AO4294 | 2SK1608 | SM1A18NSQG | NCE8205I | FHF10N65A



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