Справочник MOSFET. PSMN1R5-30BLE

 

PSMN1R5-30BLE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN1R5-30BLE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 401 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 156.1 ns
   Cossⓘ - Выходная емкость: 2741 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0015 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN1R5-30BLE

 

 

PSMN1R5-30BLE Datasheet (PDF)

 ..1. Size:221K  nxp
psmn1r5-30ble.pdf

PSMN1R5-30BLE
PSMN1R5-30BLE

PSMN1R5-30BLEN-channel 30 V 1.5 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe

 ..2. Size:254K  inchange semiconductor
psmn1r5-30ble.pdf

PSMN1R5-30BLE
PSMN1R5-30BLE

isc N-Channel MOSFET Transistor PSMN1R5-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:400K  philips
psmn1r5-30yl.pdf

PSMN1R5-30BLE
PSMN1R5-30BLE

PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 4.2. Size:346K  philips
psmn1r5-30ylc.pdf

PSMN1R5-30BLE
PSMN1R5-30BLE

PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 4.3. Size:978K  nxp
psmn1r5-30yl.pdf

PSMN1R5-30BLE
PSMN1R5-30BLE

PSMN1R5-30YLN-channel 30 V 1.5 m logic level MOSFET in LFPAKRev. 01 9 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 4.4. Size:930K  nxp
psmn1r5-30ylc.pdf

PSMN1R5-30BLE
PSMN1R5-30BLE

PSMN1R5-30YLCN-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technologyRev. 2 17 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

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History: IXFT58N20Q

 

 
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